1N6481-E3/97
vs
1N648-1
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
DO-213AB
|
|
| Package Description |
O-PELF-R2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
FREE WHEELING DIODE, HIGH RELIABILITY
|
METALLURGICALLY BONDED
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
|
| JEDEC-95 Code |
DO-213AB
|
DO-35
|
| JESD-30 Code |
O-PELF-R2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
30 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
0.4 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
250
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
400 V
|
|
| Reverse Current-Max |
10 µA
|
|
| Reverse Test Voltage |
400 V
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
TIN LEAD
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
No
|
| Power Dissipation-Max |
|
0.5 W
|
|
|
|
Compare 1N6481-E3/97 with alternatives
Compare 1N648-1 with alternatives