1N6481 vs 1N6481HE3/97 feature comparison

1N6481 International Semiconductor Inc

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1N6481HE3/97 Vishay Intertechnologies

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC VISHAY INTERTECHNOLOGY INC
Part Package Code DO-213AB
Package Description O-LELF-R2 MELF-2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JEDEC-95 Code DO-213AB DO-213AB
JESD-30 Code O-LELF-R2 O-PELF-R2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 1 A 1 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Recovery Time-Max 0.05 µs
Surface Mount YES YES
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 2 2
Rohs Code Yes
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY
Application GENERAL PURPOSE
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 250
Reverse Current-Max 10 µA
Reverse Test Voltage 400 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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Compare 1N6481HE3/97 with alternatives