1N6475US vs JAN1N6475US feature comparison

1N6475US Microchip Technology Inc

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JAN1N6475US Semtech Corporation

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Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SEMTECH CORP
Package Description HERMETICALLY SEALED, GLASS, D-5C, MELF-2 HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code compliant unknown
Factory Lead Time 21 Weeks
Breakdown Voltage-Min 43 V 43.7 V
Breakdown Voltage-Nom 43.7 V 43.7 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 63.5 V 63.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-LELF-R2 O-LELF-N2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape RECTANGULAR ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 40.3 V 40.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND NO LEAD
Terminal Position END END
Base Number Matches 5 5
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reference Standard MIL-19500/552C

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