1N6468
vs
P4KE51AR1G
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
GLASS, E PACKAGE, 2 PIN
|
O-PALF-W2
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
E PACKAGE
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
|
EXCELLENT CLAMPING CAPABILITY
|
| Breakdown Voltage-Min |
54 V
|
48.5 V
|
| Breakdown Voltage-Nom |
55 V
|
51 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
78.5 V
|
70.1 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
2.5 W
|
1 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
51.6 V
|
43.6 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
9
|
1
|
| Breakdown Voltage-Max |
|
53.6 V
|
| JEDEC-95 Code |
|
DO-204AL
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Reference Standard |
|
UL RECOGNIZED
|
|
|
|
Compare 1N6468 with alternatives
Compare P4KE51AR1G with alternatives