1N6468 vs BZW04-48BHA0G feature comparison

1N6468 Microsemi Corporation

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BZW04-48BHA0G Taiwan Semiconductor

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description GLASS, E PACKAGE, 2 PIN O-PALF-W2
Pin Count 2
Manufacturer Package Code E PACKAGE
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
Breakdown Voltage-Min 54 V 53.2 V
Breakdown Voltage-Nom 55 V 56 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 78.5 V 77 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 1 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 51.6 V 47.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 16 1
Breakdown Voltage-Max 58.8 V
JEDEC-95 Code DO-204AL
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101

Compare 1N6468 with alternatives

Compare BZW04-48BHA0G with alternatives