1N6466 vs JAN1N5646A feature comparison

1N6466 Digitron Semiconductors

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JAN1N5646A Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer DIGITRON SEMICONDUCTORS MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 33 V 34.2 V
Case Connection ISOLATED CATHODE
Clamping Voltage-Max 47.5 V 49.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 1 W
Rep Pk Reverse Voltage-Max 30.5 V 30.8 V
Reverse Current-Max 3 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 7
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Breakdown Voltage-Max 37.8 V
Breakdown Voltage-Nom 36 V
JEDEC-95 Code DO-202AA
Qualification Status Qualified
Reference Standard MIL-19500

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