1N6464US vs 1N6464US feature comparison

1N6464US Semtech Corporation

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1N6464US Microsemi Corporation

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SEMTECH CORP MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 HERMETICALLY SEALED, GLASS, D-5B, MELF-2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer SEMTECH Microsemi Corporation
Additional Feature HIGH RELIABILITY HIGH RELIABILITY, METALLURGICALLY BODED
Breakdown Voltage-Min 16.4 V 16.4 V
Clamping Voltage-Max 26.5 V 26.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-N2 O-LELF-R2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 2.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 15 V 15 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form NO LEAD WRAP AROUND
Terminal Position END END
Base Number Matches 6 8
Case Connection ISOLATED
Non-rep Peak Rev Power Dis-Max 500 W
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C

Compare 1N6464US with alternatives

Compare 1N6464US with alternatives