1N645-1E3
vs
JANTXV1N645-1/TR
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.70
|
|
| Samacsys Manufacturer |
Microsemi Corporation
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
0.4 A
|
0.4 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
No
|
| Forward Voltage-Max (VF) |
|
1 V
|
| Non-rep Pk Forward Current-Max |
|
5 A
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
MIL-PRF-19500
|
| Rep Pk Reverse Voltage-Max |
|
225 V
|
| Reverse Current-Max |
|
0.05 µA
|
| Reverse Test Voltage |
|
225 V
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 1N645-1E3 with alternatives
Compare JANTXV1N645-1/TR with alternatives