1N6382 vs 1N6382 feature comparison

1N6382 Microsemi Corporation

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1N6382 International Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP INTERNATIONAL SEMICONDUCTOR INC
Package Description PLASTIC, CASE 1, 2 PIN
Pin Count 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 9.4 V 9.4 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 11.6 V 11.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.52 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8 V 8 V
Reverse Current-Max 25 µA 25 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 21 1

Compare 1N6382 with alternatives

Compare 1N6382 with alternatives