1N6382
vs
JAN1N6142A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
MICROSS COMPONENTS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
9.4 V
9.5 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
11.6 V
14.5 V
Configuration
SINGLE
COMMON CATHODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
2
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
8 V
7.6 V
Reverse Current-Max
25 µA
100 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
2
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Nom
10 V
Reference Standard
MIL-19500/516
Compare 1N6382 with alternatives
Compare JAN1N6142A with alternatives