1N6373HR
vs
1N6373TIN/LEAD
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIGITRON SEMICONDUCTORS
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
6 V
Case Connection
ISOLATED
Clamping Voltage-Max
7.5 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
JESD-30 Code
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Rep Pk Reverse Voltage-Max
5 V
Reverse Current-Max
300 µA
Reverse Test Voltage
5 V
Surface Mount
NO
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Date Of Intro
2018-10-31
JESD-609 Code
e3
Terminal Finish
MATTE TIN
Compare 1N6373HR with alternatives
Compare 1N6373TIN/LEAD with alternatives