1N6373-E3/54
vs
1N6373G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
ON SEMICONDUCTOR
|
| Package Description |
O-PALF-W2
|
O-PALF-W2
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
CASE 1.5KE
|
41A-04
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Samacsys Manufacturer |
Vishay
|
onsemi
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
|
| Breakdown Voltage-Min |
6 V
|
6 V
|
| Breakdown Voltage-Nom |
6 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
7.1 V
|
9.4 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e3
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
6.5 W
|
5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
ZENER
|
| Terminal Finish |
MATTE TIN
|
TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
2
|
| Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
Compare 1N6373-E3/54 with alternatives
Compare 1N6373G with alternatives