1N6373 vs 1N6373TR feature comparison

1N6373 New Jersey Semiconductor Products Inc

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1N6373TR Microsemi Corporation

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer NEW JERSEY SEMICONDUCTOR PRODUCTS INC MICROSEMI CORP
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 6 V 6 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 5 V 5 V
Technology AVALANCHE AVALANCHE
Base Number Matches 18 3
Rohs Code No
Package Description PLASTIC, CASE 1, 2 PIN
Pin Count 2
Manufacturer Package Code CASE 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED
Clamping Voltage-Max 7.5 V
Configuration SINGLE
JESD-30 Code O-PALF-W2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL

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Compare 1N6373TR with alternatives