1N6373 vs 1N6373 feature comparison

1N6373 MDE Semiconductor Inc

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1N6373 New Jersey Semiconductor Products Inc

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Min 6 V 6 V
Case Connection ISOLATED
Clamping Voltage-Max 7.5 V
Configuration SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard UL CERTIFIED
Rep Pk Reverse Voltage-Max 5 V 5 V
Reverse Current-Max 300 µA
Reverse Test Voltage 5 V
Surface Mount NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 18

Compare 1N6373 with alternatives

Compare 1N6373 with alternatives