1N6373
vs
1N6373-E3/73
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIGITRON SEMICONDUCTORS
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
6 V
9.4 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
7.5 V
7.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
6.5 W
Rep Pk Reverse Voltage-Max
5 V
5 V
Reverse Current-Max
300 µA
Reverse Test Voltage
5 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
1
Pbfree Code
Package Description
O-PALF-W2
Pin Count
2
Manufacturer Package Code
CASE 1.5KE
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Qualification Status
Not Qualified
Compare 1N6373 with alternatives
Compare 1N6373-E3/73 with alternatives