1N6368E3
vs
SICT-15C
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
No
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
SEMICON COMPONENTS INC
Part Package Code
DO-13
Package Description
O-MALF-W2
O-XALF-W2
Pin Count
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
17.6 V
17.6 V
Breakdown Voltage-Nom
17.6 V
18 V
Case Connection
CATHODE
ISOLATED
Clamping Voltage-Max
21.4 V
21.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-202AA
JESD-30 Code
O-MALF-W2
O-XALF-W2
JESD-609 Code
e3
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
15 V
15 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Reverse Current-Max
2 µA
Compare 1N6368E3 with alternatives
Compare SICT-15C with alternatives