1N6362E3
vs
1N6379
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
INTERNATIONAL SEMICONDUCTOR INC
|
| Part Package Code |
DO-13
|
|
| Package Description |
O-MALF-W2
|
O-PALF-W2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Min |
25.9 V
|
25.9 V
|
| Breakdown Voltage-Nom |
25.9 V
|
|
| Case Connection |
CATHODE
|
ISOLATED
|
| Clamping Voltage-Max |
32 V
|
32 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-202AA
|
|
| JESD-30 Code |
O-MALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e3
|
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
22 V
|
22 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
13
|
1
|
| Reverse Current-Max |
|
2 µA
|
|
|
|
Compare 1N6362E3 with alternatives
Compare 1N6379 with alternatives