1N6357
vs
SICT-8
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
LITTELFUSE INC
SEMICON COMPONENTS INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Min
9.4 V
9.4 V
Breakdown Voltage-Nom
9.4 V
9.4 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
11.5 V
11.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
JESD-30 Code
O-MALF-W2
O-XALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
8 V
8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
2
Rohs Code
Package Description
O-XALF-W2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
25 µA
Compare 1N6357 with alternatives
Compare SICT-8 with alternatives