1N6345E3
vs
1N5267BAR2
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
STMICROELECTRONICS
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY, METALLURGICALLY BONDED
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
Dynamic Impedance-Max
180 Ω
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
200 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.5 W
Reference Voltage-Nom
75 V
75 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Tol-Max
5%
5%
Working Test Current
1.7 mA
1.7 mA
Base Number Matches
1
1
Knee Impedance-Max
1700 Ω
Qualification Status
Not Qualified
Reverse Current-Max
0.1 µA
Voltage Temp Coeff-Max
73.5 mV/°C
Compare 1N6345E3 with alternatives
Compare 1N5267BAR2 with alternatives