1N6303ATR
vs
1.5KE200A-A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MICROSEMI CORP
DIODES INC
Package Description
CASE 1, 2 PIN
O-XALF-W2
Pin Count
2
Manufacturer Package Code
CASE 1
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
189 V
210 V
Breakdown Voltage-Min
171 V
190 V
Breakdown Voltage-Nom
180 V
200 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
246 V
274 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-XALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.52 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
154 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
1
Moisture Sensitivity Level
1
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
5 µA
Compare 1N6303ATR with alternatives
Compare 1.5KE200A-A with alternatives