1N6303ARL4 vs 1N6303 feature comparison

1N6303ARL4 onsemi

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1N6303 Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ON SEMICONDUCTOR CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 41A-04
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 210 V 220 V
Breakdown Voltage-Min 190 V 180 V
Breakdown Voltage-Nom 200 V 200 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 274 V 287 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 171 V 162 V
Surface Mount NO NO
Technology ZENER AVALANCHE
Terminal Finish TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 36
Part Package Code DO-27S
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-201AE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Reverse Current-Max 1 µA
Reverse Test Voltage 162 V

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