1N6298A vs 1N6298A.TR feature comparison

1N6298A Galaxy Semi-Conductor Co Ltd

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1N6298A.TR Semtech Corporation

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD SEMTECH CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 137 V 137 V
Breakdown Voltage-Min 124 V 124 V
Breakdown Voltage-Nom 130.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 179 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-201AE DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Rep Pk Reverse Voltage-Max 111 V 111 V
Reverse Current-Max 1 µA
Reverse Test Voltage 111 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 39 1
Qualification Status Not Qualified

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