1N6298 vs MV1N6297AE3TR feature comparison

1N6298 Daco Semiconductor Co Ltd

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MV1N6297AE3TR Microsemi Corporation

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer DACO SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 143 V 126 V
Breakdown Voltage-Min 117 V 114 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 106 V 102 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 38 1
Rohs Code Yes
Pin Count 2
Manufacturer Package Code CASE 1
Breakdown Voltage-Nom 120 V
Clamping Voltage-Max 165 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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