1N6297A vs MA1N6298ATR feature comparison

1N6297A Sussex Semiconductor Inc

Buy Now Datasheet

MA1N6298ATR Microsemi Corporation

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SUSSEX SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 120 V
Clamping Voltage-Max 165 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 102 V 111 V
Surface Mount NO NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 38 1
Package Description O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 1
Breakdown Voltage-Max 137 V
Breakdown Voltage-Min 124 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JESD-30 Code O-PALF-W2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL

Compare MA1N6298ATR with alternatives