1N6295-E3 vs 1.5KE100-GT3 feature comparison

1N6295-E3 Vishay Semiconductors

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1.5KE100-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 1.5KE
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 110 V 110 V
Breakdown Voltage-Min 90 V 90 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 81 V 81 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Base Number Matches 2 2
JEDEC-95 Code DO-201AE
Reference Standard UL RECOGNIZED

Compare 1N6295-E3 with alternatives

Compare 1.5KE100-GT3 with alternatives