1N6284AE3 vs 1N6285E3 feature comparison

1N6284AE3 Microsemi Corporation

Buy Now Datasheet

1N6285E3 Microsemi Corporation

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Manufacturer Package Code CASE 1 CASE 1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 37.8 V 42.9 V
Breakdown Voltage-Min 34.2 V 35.1 V
Breakdown Voltage-Nom 36 V 39 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 49.9 V 56.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 30.8 V 31.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish PURE MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
JESD-609 Code e3
Reverse Current-Max 5 µA

Compare 1N6284AE3 with alternatives

Compare 1N6285E3 with alternatives