1N6283A vs SMAJ11A-T3 feature comparison

1N6283A Semtech Corporation

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SMAJ11A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMTECH CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 34.7 V 13.48 V
Breakdown Voltage-Min 31.4 V 12.2 V
Breakdown Voltage-Nom 33 V
Case Connection ISOLATED
Clamping Voltage-Max 45.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201 DO-214AC
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 1500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 28.2 V 11 V
Reverse Current-Max 5 µA
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 2 1
Package Description R-PDSO-C2
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

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