1N6282-T
vs
1N6282A/71-E3
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
DIODES INC
|
VISHAY SEMICONDUCTORS
|
Package Description |
O-XALF-W2
|
O-PALF-W2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Breakdown Voltage-Max |
33 V
|
31.5 V
|
Breakdown Voltage-Min |
27 V
|
28.5 V
|
Breakdown Voltage-Nom |
30 V
|
30 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
43.5 V
|
41.4 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-XALF-W2
|
O-PALF-W2
|
Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
-55 °C
|
Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
24.3 V
|
25.6 V
|
Reverse Current-Max |
5 µA
|
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Pin Count |
|
2
|
Manufacturer Package Code |
|
CASE 1.5KE
|
Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY
|
JESD-609 Code |
|
e3
|
Power Dissipation-Max |
|
6.5 W
|
Terminal Finish |
|
Tin (Sn)
|
|
|
|
Compare 1N6282-T with alternatives
Compare 1N6282A/71-E3 with alternatives