1N6282-T vs 1N6282A/71-E3 feature comparison

1N6282-T Diodes Incorporated

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1N6282A/71-E3 Vishay Semiconductors

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC VISHAY SEMICONDUCTORS
Package Description O-XALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 33 V 31.5 V
Breakdown Voltage-Min 27 V 28.5 V
Breakdown Voltage-Nom 30 V 30 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 43.5 V 41.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 24.3 V 25.6 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Pbfree Code Yes
Rohs Code Yes
Pin Count 2
Manufacturer Package Code CASE 1.5KE
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Power Dissipation-Max 6.5 W
Terminal Finish Tin (Sn)

Compare 1N6282-T with alternatives

Compare 1N6282A/71-E3 with alternatives