1N6281A-B vs 1.5KE27AE3TR feature comparison

1N6281A-B Diodes Incorporated

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1.5KE27AE3TR Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC MICROSEMI CORP
Package Description O-XALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 28.4 V 28.4 V
Breakdown Voltage-Min 25.7 V 25.7 V
Breakdown Voltage-Nom 27 V 27 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 37.5 V 37.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Rohs Code Yes
Pin Count 2
Manufacturer Package Code CASE 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.52 W
Rep Pk Reverse Voltage-Max 23.1 V
Terminal Finish MATTE TIN

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Compare 1.5KE27AE3TR with alternatives