1N6281 vs 1N6280A-A feature comparison

1N6281 International Semiconductor Inc

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1N6280A-A Diodes Incorporated

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC DIODES INC
Package Description O-PALF-W2 O-XALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Max 29.7 V 25.2 V
Breakdown Voltage-Min 24.3 V 22.8 V
Breakdown Voltage-Nom 27 V 24 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 39.1 V 33.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -40 °C -65 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 21.8 V
Reverse Current-Max 5 µA 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 1

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