1N6280A vs 1N6280 feature comparison

1N6280A Microsemi Corporation

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1N6280 Taiwan Semiconductor

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Package Description PLASTIC, CASE 1 , 2 PIN
Pin Count 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 25.2 V 26.4 V
Breakdown Voltage-Min 22.8 V 21.6 V
Breakdown Voltage-Nom 24 V 24 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 33.2 V 34.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 20.5 V 19.4 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD PURE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 33 4
JEDEC-95 Code DO-201
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED

Compare 1N6280A with alternatives

Compare 1N6280 with alternatives