1N6280A
vs
1N6280A
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
EIC SEMICONDUCTOR CO LTD
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
25.2 V
|
25.2 V
|
| Breakdown Voltage-Min |
22.8 V
|
22.8 V
|
| Breakdown Voltage-Nom |
24 V
|
24 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
33.2 V
|
33.2 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
5 W
|
6.5 W
|
| Rep Pk Reverse Voltage-Max |
20.5 V
|
20.5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Base Number Matches |
3
|
1
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
|
| Diode Element Material |
|
SILICON
|
| Forward Voltage-Max (VF) |
|
3.5 V
|
| JEDEC-95 Code |
|
DO-201AE
|
| JESD-30 Code |
|
O-PALF-W2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Reverse Current-Max |
|
1 µA
|
| Reverse Test Voltage |
|
20.5 V
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|