1N6276-E3/90
vs
MQ1N6276AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROSEMI CORP
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
2
Manufacturer Package Code
CASE 1.5KE
CASE 1
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
17.6 V
16.8 V
Breakdown Voltage-Min
14.4 V
15.2 V
Breakdown Voltage-Nom
16 V
16 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
23.5 V
22.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
1.52 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
12.9 V
13.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Moisture Sensitivity Level
1
Compare 1N6276-E3/90 with alternatives
Compare MQ1N6276AE3 with alternatives