1N6276 vs 1N6276A/4F-E3 feature comparison

1N6276 Galaxy Microelectronics

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1N6276A/4F-E3 Vishay Semiconductors

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Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SEMICONDUCTORS
Part Package Code DO-27S
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 17.6 V 16.8 V
Breakdown Voltage-Min 14.4 V 15.2 V
Breakdown Voltage-Nom 16 V 16 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 23.5 V 22.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Rep Pk Reverse Voltage-Max 12.9 V 13.6 V
Reverse Current-Max 1 µA
Reverse Test Voltage 12.9 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 37 1
Pbfree Code Yes
Rohs Code Yes
Package Description O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 1.5KE
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

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