1N6274A
vs
1N6274A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
ON SEMICONDUCTOR
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
13.7 V
13.7 V
Breakdown Voltage-Min
12.4 V
12.4 V
Breakdown Voltage-Nom
13 V
13 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
18.2 V
18.2 V
Configuration
SINGLE
SINGLE
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Rep Pk Reverse Voltage-Max
11.1 V
11.1 V
Surface Mount
NO
NO
Technology
AVALANCHE
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
6
Package Description
O-PALF-W2
Pin Count
2
Manufacturer Package Code
CASE 41A-04
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Additional Feature
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
Diode Element Material
SILICON
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Terminal Finish
TIN
Compare 1N6274A with alternatives
Compare 1N6274A with alternatives