1N6273E3TR vs MX1N6273TR feature comparison

1N6273E3TR Microsemi Corporation

Buy Now Datasheet

MX1N6273TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Manufacturer Package Code CASE 1 CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 13.2 V 13.2 V
Breakdown Voltage-Min 10.8 V 10.8 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9.72 V 9.72 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Breakdown Voltage-Nom 12 V
Clamping Voltage-Max 17.3 V

Compare 1N6273E3TR with alternatives

Compare MX1N6273TR with alternatives