1N6271A vs 1.5KE10A feature comparison

1N6271A Taiwan Semiconductor

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1.5KE10A Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.5 V 10.5 V
Breakdown Voltage-Min 9.5 V 9.5 V
Breakdown Voltage-Nom 10 V 10 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 14.5 V 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201 DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.55 V 8.55 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish PURE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Package Description O-PALF-W2
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN

Compare 1N6271A with alternatives

Compare 1.5KE10A with alternatives