1N6271A
vs
1N6271A-T
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
EIC SEMICONDUCTOR CO LTD
DIODES INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
10.5 V
10.5 V
Breakdown Voltage-Min
9.5 V
9.5 V
Breakdown Voltage-Nom
10 V
10 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
14.5 V
14.5 V
Configuration
SINGLE
SINGLE
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
JESD-30 Code
O-PALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Rep Pk Reverse Voltage-Max
8.55 V
8.55 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
1
Package Description
O-XALF-W2
Diode Element Material
SILICON
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Qualification Status
Not Qualified
Reverse Current-Max
10 µA
Compare 1N6271A with alternatives
Compare 1N6271A-T with alternatives