1N6270ATR
vs
MV1N6270AE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAGOR ELECTRONICA S COOP
MICROSEMI CORP
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
FORMED LEAD OPTIONS ARE AVAILABLE
Breakdown Voltage-Max
9.55 V
9.55 V
Breakdown Voltage-Min
8.65 V
8.65 V
Breakdown Voltage-Nom
9.1 V
9.1 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
13.4 V
13.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201AE
JESD-30 Code
O-PALF-W2
O-PALF-W2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1.52 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
7.78 V
7.78 V
Reverse Current-Max
50 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
PURE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
1
Manufacturer Package Code
CASE 1
JESD-609 Code
e3
Compare 1N6270ATR with alternatives
Compare MV1N6270AE3TR with alternatives