1N6270AC
vs
1N6270A-E3/54
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
VISHAY SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Nom
9.1 V
9.1 V
Clamping Voltage-Max
13.4 V
13.4 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
7.8 V
7.78 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Pbfree Code
Package Description
O-PALF-W2
Pin Count
2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
9.55 V
Breakdown Voltage-Min
8.65 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
Forward Voltage-Max (VF)
3.5 V
Non-rep Peak Rev Power Dis-Max
1500 W
Number of Elements
1
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Power Dissipation-Max
6.5 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Reverse Current-Max
50 µA
Reverse Test Voltage
7.78 V
Technology
AVALANCHE
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Compare 1N6270AC with alternatives
Compare 1N6270A-E3/54 with alternatives