1N6270A
vs
1N6270
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max
9.55 V
10 V
Breakdown Voltage-Min
8.65 V
8.19 V
Breakdown Voltage-Nom
9.1 V
9.1 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
13.4 V
13.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-201AE
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Reference Standard
MIL-STD-202
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
7.78 V
7.37 V
Reverse Current-Max
50 µA
Reverse Test Voltage
7.78 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
39
37
Package Description
O-PALF-W2
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Terminal Finish
PURE TIN
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