1N6267A-E3/54
vs
1N6267
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
MDE SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Vishay
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
7.14 V
7.48 V
Breakdown Voltage-Min
6.45 V
6.12 V
Breakdown Voltage-Nom
6.8 V
6.8 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
10.5 V
10.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
3.5 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
5 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
MIL-STD-750; UL LISTED
Rep Pk Reverse Voltage-Max
5.8 V
5.5 V
Reverse Current-Max
1000 µA
Reverse Test Voltage
5.8 V
5.5 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Base Number Matches
2
40
ECCN Code
EAR99
HTS Code
8541.10.00.50
JEDEC-95 Code
DO-201
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