1N6267A vs 1.5KE6.8A/4 feature comparison

1N6267A Galaxy Microelectronics

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1.5KE6.8A/4 Vishay Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD GENERAL SEMICONDUCTOR INC
Part Package Code DO-27S
Package Description DO-27S, 2 PIN O-PALF-W2
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 7.14 V 7.14 V
Breakdown Voltage-Min 6.45 V 6.45 V
Breakdown Voltage-Nom 6.8 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 10.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Rep Pk Reverse Voltage-Max 5.8 V 5.8 V
Reverse Current-Max 1000 µA
Reverse Test Voltage 5.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 40 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED

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