1N6267A
vs
1.5KE6.8A
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
PULSE ELECTRONICS CORP
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
6.8 V
6.45 V
Breakdown Voltage-Nom
6.8 V
6.8 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
10.5 V
10.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-201
DO-201
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
6.5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
5.8 V
5.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
6
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max
7.14 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare 1N6267A with alternatives
Compare 1.5KE6.8A with alternatives