1N6166AUS
vs
JANTXV1N6166AUS
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROSS COMPONENTS
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Additional Feature
TRAY
Breakdown Voltage-Min
95 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
137.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
7.5 W
Rep Pk Reverse Voltage-Max
76 V
76 V
Reverse Current-Max
5 µA
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
5
5
Rohs Code
No
Package Description
MELF-2
JESD-609 Code
e0
Qualification Status
Qualified
Reference Standard
MIL
Terminal Finish
TIN LEAD
Compare 1N6166AUS with alternatives
Compare JANTXV1N6166AUS with alternatives