1N6152A vs 3Z20 feature comparison

1N6152A Semtech Corporation

Buy Now Datasheet

3Z20 Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer SEMTECH CORP TOSHIBA CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 O-PALF-W2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 25.7 V
Breakdown Voltage-Nom 27 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 37.4 V
Configuration COMMON CATHODE, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 2 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -40 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 20.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 15 4
Rohs Code No
Dynamic Impedance-Max 30 Ω
JEDEC-95 Code DO-201AD
JESD-609 Code e0
Reference Voltage-Nom 20 V
Reverse Current-Max 10 µA
Terminal Finish Tin/Lead (Sn/Pb)
Voltage Tol-Max 10%
Working Test Current 10 mA

Compare 1N6152A with alternatives

Compare 3Z20 with alternatives