1N6151A vs ICTE-18C feature comparison

1N6151A Digitron Semiconductors

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ICTE-18C Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIGITRON SEMICONDUCTORS MICROSEMI CORP
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 22.8 V 21.2 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 33.3 V 25.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Rep Pk Reverse Voltage-Max 18.2 V 18 V
Reverse Current-Max 5 µA 2 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 12 11
Package Description O-PALF-W2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Qualification Status Not Qualified

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