1N6151
vs
1N6152
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
BKC SEMICONDUCTORS INC
STMICROELECTRONICS
Reach Compliance Code
unknown
not_compliant
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min
20.52 V
24.3 V
Breakdown Voltage-Nom
24 V
27 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
36.54 V
39.2 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
E-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ELLIPTICAL
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
18.2 V
20.6 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
12
12
Package Description
GLASS, CB-432, 2 PIN
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
29.7 V
Compare 1N6152 with alternatives