1N6125US
vs
JAN1N6125US
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Min
58.9 V
58.9 V
Breakdown Voltage-Nom
62 V
Case Connection
ISOLATED
Clamping Voltage-Max
89 V
89.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MELF-R2
O-LELF-R2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
2 W
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
47.1 V
42.6 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
5
1
Package Description
MELF-2
Factory Lead Time
25 Weeks
Additional Feature
HIGH RELIABILITY
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Reference Standard
MIL-19500
Reverse Current-Max
1 µA
Reverse Test Voltage
42.6 V
Compare 1N6125US with alternatives
Compare JAN1N6125US with alternatives