1N6123AUSE3
vs
JANTXV1N6123AUS
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
BKC SEMICONDUCTORS INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
48.5 V
51 V
Clamping Voltage-Max
70.1 V
73.5 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-MELF-R2
Number of Terminals
2
2
Package Body Material
GLASS
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Rep Pk Reverse Voltage-Max
38.8 V
39 V
Surface Mount
YES
YES
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
1
8
Breakdown Voltage-Min
48.5 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/516
Technology
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
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